“邀请报告（持续更新中）”

Masaaki Kuzuhara

Professor

Kwansei Gakuin University

Prof. Masaaki Kuzuhara’s research interests include physics and characterization of GaN-based heterojunction devices. He was awarded the 2002 Ichimura Prize from the New Technology Development Foundation. He is a Fellow of IEEE and Japan Society of Applied Physics.

Invited Report Title: High-voltage and high-frequency GaN-based HEMTs for wireless power transmission

ABSTRACT: High-frequency and high-power amplifiers are demanded for wireless power transmission applications. In this talk, various technical attempts to improve high-frequency power gains and output power densities of GaN-based HEMTs will be discussed.

Ming Xuefei

Senior Engineer

CKS Co.，Ltd

Ming Xuefei is the Deputy General Manager of CETC. He has been engaged in advanced packaging technology and management of integrated circuits for many years, and is responsible for the technical research of many key national projects such as the Core-electronics, High-end-general-Chips, and Infrastructural-software project.

Invited Report Title: Thoughts on self-evolving advanced integrated manufacturing system for integrated circuits

ABSTRACT: The development of advanced manufacturing of integrated circuits is evolving in the direction of heterogeneous integration. In this process, the industry uses mathematical tools based on Statistics (such as CPK, SPC, etc.) to solve the control problems in the process. However, because there are still many cross-scale and interdisciplinary problems that have not been completely solved, there are still "black boxes" in the control links in the process of R & D and production, In particular, it is necessary to modify the mathematical analysis model for process control and normalization under probability fluctuations to ensure the rationality of data collection and analysis results. Starting from this problem, the author puts forward a conception, whether it can be integrated with chip design, based on the big data analysis of design and manufacturing process, establish a complete mathematical model system, and promote the cyclic iteration of design manufacturing process. Chips can be self optimized according to the actual situation of process manufacturing, so as to realize the self evolution system of integrated circuits.

Zhu Jian

Chief Scientist

CETC

Zhu Jian, Ph.D, Fellow of China micron nanotechnology society, chairman of MEMS branch of China Semiconductor Industry Association, member of electronic Expert Committee of national science and Technology Commission, expert of national microelectronics expert group. As one of the founders of RF MEMS in China, she is mainly engaged in the research on the principle, process and application of RF MEMS and RF micro system.

Invited Report Title: Development and future of heterogeneous integration technology in post Moore Era

ABSTRACT: In the post-Moore era, some scientists have gradually reduced the linewidth to 3nm or even into angstrom (A) magnitude along Moore's law through new materials and new paradigms, while some scientists have sought to adopt heterogeneous three-dimensional integration to meet the needs of high-speed, low-power and high-performance next-generation electronics. Heterogeneous integration can make full use of the semiconductor properties of different materials to optimize the system performance. At the same time, high-density 3D stacking technology can further reduce the volume and weight of the system. Taking advantage of the characteristics of high silicon processing precision, good batch at one time, and multi-layer three-dimensional stacking, we creatively proposed the research idea of realizing the next generation RF micro system architecture through heterogeneous integration of compound chips and wafer level three-dimensional stacking. This idea overturns the design and production concept of traditional microwave components and greatly reduced the volume and weight of RF modules. A series of original core technologies have been broken through, and a complete three-dimensional heterogeneous integration technology system has been established. For the first time in the world, the overall technical architecture of RF microsystems that can cover Ka band has been realized. Based on this architecture, the first 38GHz heterogeneous integrated transceiver chip in the world was jointly developed with IMEC. We release a series of silicon-based RF micro system products based on TSV three-dimensional integration technology, which will bring great changes to the entire microwave module / system industry ecosystem in the future.

Xu Jianbin

Professor (Chair)

The Chinese University of Hong Kong

Prof. Xu is the Lee Cheuk-Man Chair Professor of Electrical Engineering at the Chinese University of Hong Kong, Assistant Dean of the Faculty of Engineering, Distinguished Scholar and IEEE Fellow. He has been awarded the Changjiang Distinguished Professor by the Ministry of Education, the National High-Level Talents, Joint Research Fund for Overseas Chinese, Hong Kong and Macao Scholars (twice consecutively), and the Second Prize of Natural Science by the Ministry of Education.

Invited Report Title: Two-Dimensional Layered Materials and Their Investigation in Optoelectronics

ABSTRACT: The family of two-dimensional (2D) materials consists of a wide variety of layered materials with different properties, and the layered film thickness can be down to an atomic scale. They have a variety of unique electronic, optical, and thermal as well as other properties. In the past two decades or so, numerous important advances have been made in the exploration of 2D materials and devices, which hold great promise for optoelectronic applications from the visible to infrared and terahertz (THz) wavelength ranges. In this presentation, I will first briefly review several advances in light-matter interactions in 2D materials, especially the various types of polaritons associated with photoexcitation. Then I will focus on several specific topics related to optoelectronics. In order to obtain high-performance devices built from light-matter interactions with finite lengths of typically around a few nanometers, we have attempted new design and fabrication methods for optoelectronic devices, enabling operations from the visible to infrared detection and terahertz light modulation. We will demonstrate progress in graphene, molybdenum disulfide and tungsten ditelluride, and their related heterostructures and/or hybrid architectures, through several examples.

Lu Geyu

Professor

Jilin University

Dean of College of Electronic Science and Engineering, Jilin University; Winner of the National Science Fund for Distinguished Young Scholars; Leader of Innovation Team of Ministry of Education; Director of State Key Laboratory on Integrated Optoelectronics; Deputy Director of Academic Committee of Jilin University.

Invited Report Title: High Performance Gas Sensors Based on Nanostructured Metal Oxide Semiconductors

ABSTRACT: Metal oxide semiconductor (MOS)-based chemiresistive gas sensors with irreplaceable merits of high, rapid, and reversible response, along with simple structure, cost-effectiveness, and integrated circuit technology compatibility have been widely used in environmental protection, breath disease diagnosis, industrial safety, etc. Here, we focus on the tremendous advances in material synthesis methodologies and microelectronic device preparation techniques for MOS-based chemiresistive gas sensors, which can enable the development of high performance chemiresistive gas sensors, with emerging applications in diverse areas. By tuning the porous architectures, compositions, and morphologies of nanostructured MOS, coupled with the incorporation of noble metal nanoparticles, MOS-based sensing materials have exhibited unprecedentedly high performance. In addition, for solving the inherent disadvantage of high energy consumption of chemiresistive gas sensors, and breakthrough the limitation of their applications in mobile, portable and wearable electronic devices, different strategies including self-heating, MEMS technology, and room-temperature operation using optical excitation have been proposed and discussed. Based on aforementioned analysis, we provide our perspectives on future directions for the development of high performance of chemiresistive gas sensors to meet the ever-growing demands from diverse fields.

Liu Chang

Professor

Wuhan University

Prof. Dr. Liu Chang, Director of the Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and Deputy Director of Integrated Circuit Industry Development Expert Advisory Committee of Hubei Province. He once served as the Topic Editor (semiconductor device physics) of Current Applied Physics, the President of Physical Society of Hubei Province, Dean of School of Physics and Technology, Director of Nanoscience and Nanotechnology Center of Wuhan University, and the chairman of eight international and bilateral academic conferences.

Invited Report Title: Short channel thin film transistors for driving micro-LED using natural light emitting wide bandgap chips

ABSTRACT: As the next-generation displays technology, micro light-emitting diodes (Micro-LEDs) with a high luminous efficiency, low power consumption, high resolution and fast response speed are currently attracting much attention. In order to obtain high resolution, the unit pixel size of the micro-LEDs need to be scaled down to around 5 μm. Traditional LED driving circuit with channel lengths of several tens to hundreds of micrometers can hardly meet the size requirements of transistors. Therefore, it is necessary to scale down the channel length of thin film transistors (TFTs) to less than 5 μm. Nevertheless, with the scaling down of the channel length, the short channel effects (SCEs) of TFTs must be taken into consideration. In this report, ZnO channel layers TFTs were fabricated on atomic layer deposited (ALD) ZnO, with Cu/Ti bilayer metal as the electrodes, achieving super TFTs performance. This kind of TFTs may be applied in industrial massive production.

Liu Chang

Professor

Wuhan University

Invited Report Title: Short channel thin film transistors for driving micro-LED using natural light emitting wide bandgap chips

Li Long

Professor

Xidian University

Prof. Li is the Director of Key Laboratory of High-Speed Circuit Design and EMC, Ministry of Education, China. He has published over 185 journal papers and held over 40 Chinese patents. Prof. Li has received Scientific and Technological Progress Award, Outstanding Scientific and Technological Youth Scholar Award in Shanxi Province, JSPS Fellowship Award, IEEE APS Raj Mittra Travel Grant Senior Researcher Award, and several Best Paper Awards. Prof. Li was awarded the Chang-Jiang Scholars Distinguished Professor by Ministry of Education.

Invited Report Title: Research on Electromagnetic Metamaterials and Their Functional Devices

ABSTRACT: Metamaterials refer to artificial composite structures or materials that have extraordinary physical properties not found in natural materials. In essence, metamaterial is a novel idea of structural design, which is to break through the limitations of some natural laws through the orderly design of structures on the key physical scales of materials. So far, metamaterials have been developed, including photonic crystals (PBG, EBG), left-handed materials (LHM), and supermagnetic materials, etc. The concept has been extended to metasurfaces, including FSS, SSS and PSS, etc. Metamaterials could be used to manipulate electromagnetic waves, leading to new physical phenomena and applications. This talk focuses on the design of electromagnetic metamaterials, functional devices, and their applications. The regulation of electromagnetic wave mainly focuses on several characteristic aspects: frequency, amplitude, phase, polarization, propagation direction, and wave modes. Different artificial electromagnetic metasurfaces can achieve different characteristics of spatial filtering. We designed various electromagnetic metamaterials and novel functional devices, which can be applied to microbase station systems for 5G/6G wireless communication systems, orbital angular momentum (OAM) vortex electromagnetic wave generators, and multi-source and multi-focal wireless power transmission system (MIMO-WPT), RF energy harvesting, etc.

Pan Lijia

Professor

Nanjing University

Pan Lijia is a full Professor at the School of Electronic Engineering, Nanjing University. He was a visiting scholar at Stanford University. He received the award of New Century Excellent Talents in University from the Chinese Ministry of Education in 2009. His current research focuses on smart materials and sensors, bionic devices, and energy materials devices.

Invited Report Title: Origin and development of bionic skin electronic devices

ABSTRACT: This report introduces the origin and research progress of flexible polymer sensors for bionic skin. As an important physical interface for human interaction with the environment, skin is a natural super-sensitive sensor that converts physical signals such as pressure, temperature and texture into electrical signals to achieve tactile and somatosensory functions. It has the characteristics of flexibility, multi-mode, high-density integration and comprehensive information processing. Electronic skin is a flexible electronic device and system of bionic skin, which crosses many disciplines such as information science, electronics, material science and biology, and has a wide application prospect in the fields of health detection and intelligent perception.

Zhou Peng

Professor

Fudan University

Peng Zhou is a full professor at the State Key Laboratory of ASIC and system, School of Microelectronics, Fudan University, China. He is a NSFC (National Science Fund of China) Distinguished Young Scholar, and the winner of the young and middle-aged leading talents of the Ministry of Science and Technology. He has invented a new type Flash memory technology with both high speed and non-volatile, and realized high-area-efficiency single-transistor logic in-situ memory technology, and obtained high-performance storage devices, high-efficiency algorithms and chips. Currently, Professor Zhou is interested in novel high-efficiency and low-power electronic devices based on layered materials, focusing on the application in memory, synaptic electronics, and neuromorphic systems. He has published more than 200 scientific papers on Nature Nanotechnology, Nature Electronics, and Nature Communications etc.

Invited Report Title: The Road for 2D Semiconductor in Silicon Age

ABSTRACT: As the feature size of silicon-based integrated circuits (ICs) approaches the physical limit, short-channel effects appear, gate control attenuates, and leakage current increases, which seriously affects transistor performance and causes chip failure. Due to the inherent thickness of bulk silicon, the physical area cannot be further reduced, which restricts the area efficiency of silicon-based ICs. In addition, the speed mismatch between memory readout and logic operation, and the separation of memory and computing units together form the memory wall bottleneck in silicon-based ICs. With unique characteristics, including no dangling bond surface, atomic-level thickness, abundant adjustable energy bands, excellent optical electrostatic properties etc., two-dimensional (2D) materials have the potential to enhance gate control, reduce leakage, improve energy and area efficiency, and realize the integration of perception, memory and computing. This report discusses the roadmap for the fusion of 2D materials and silicon ICs, including alleviating the problems faced by silicon ICs from the application of 2D materials in gate-all-around, memory and logic transistors, and enabling the creation of an all-in-one sensing, memory and computing system. Finally, it provides an outlook on the challenges and promising paths to fusing 2D materials with silicon ICs for large-scale applications.

Wang Yuan

Professor

Peking University

Wang Yuan received the Ph.D. degree in Microelectronics from Peking University in 2006. He is currently a Full Professor in the School of Integrated Circuits and the Header of Key Laboratory of Microelectronic Devices and Circuits (MoE), Peking University. His current research interests include the reliability design for ICs and the novel paradigm chip design. He is the author or co-author of almost 200 papers published in journals and conferences, and he holds more than 60 patents.

Invited Report Title: Modeling Snapback Phenomena for SPICE-based Electrostatic Discharge (ESD) Circuit Simulation

ABSTRACT: ESD protection is vital in integrated circuit (IC) chip design. Since the ESD protection circuit mostly works with high-voltage and high-speed charging pulses, its design is quite different from the conventional IC design. Since conventional SPICE models are not optimized for ESD modeling, circuit-level ESD simulation usually fails to present the MOS snapback phenomena due to the lack of an appropriate device model. Recent works have presented numerical or behavior models for MOS-based CMOS protection devices. This paper presents a physics-based compact model for the snapback phenomena of MOS ESD devices. The compact MOS model consists of three standard SPICE components, including a MOS modeled by BSIM4, a bipolar junction transistor (BJT) modeled by MEXTRAM, and a substrate resistor. The snapback phenomenon of MOS ESD devices is successfully simulated by employing the approach. And simulation shows a good correlation to measurement data.

Miao Feng

Professor

Nanjing University

Feng Miao is currently a Professor and Associate Dean of School of Physics, Nanjing University. He is a NSFC (National Science Fund of China) Distinguished Young Scholar, and the Chief Scientist of a National Key Basic Research Program. He has published over 110 technical papers (over 22000 citations, Web of Science) and is the inventor of over 30 issued/pending patents. His awards include: Chinese Physical Society “Huang Kun” Award (2020-2021), IAAM Medal (International Association of Advanced Materials, Sweden) (2021), China "Leading Scientists, Engineers and Innovators" (2019), China "Young and Middle-aged Leading Scientists, Engineers and Innovators" (awarded by ministry of science and technology, China) (2018), etc.

Invited Report Title: Van der Waals Heterostructures for Emerging Memory and Neuromorphic Applications

ABSTRACT: Van der Waals (vdW) heterostructures offer unprecedented possibilities to design new structures with atomic precision, and to realize emerging device applications. In this talk, I will start with an important type of in-memory computing device, robust memristors with excellent memory performance and thermal stability, which can be created from a vdW heterostructure composed of graphene/MoS_2–xO_x/graphene. I will then discuss a prototype reconfigurable neural network vision sensor based on a WSe₂/BN heterostructure that operates via gate-tunable positive/negative photoresponses, and a band-alignment-tunable PdSe₂/MoTe₂ heterostructure which provides simultaneous broadband image sensing and convolutional processing. A neuromorphic vision system with brain-inspired visual perception can be further realized by networking such retinomorphic sensors with a memristive crossbar array. Our latest results on an electrically tunable homojunction for reconfigurable circuits, as well as a scalable massively parallel computing scheme in crossbar arrays will be presented in the last part of my talk.

Wang Yongjin

Professor

Nanjing University of Posts and Telecommunications

Prof. Wang is the head of the first "National Huang Danian Type Teacher Team", the head of the National "111 Program", the Foundation of the Ministry of Education of China for Outstanding Young Scholars, the Head of International Cooperation Joint Laboratory of GaN Optoelectronics Integration in Jiangsu Province

Invited Report Title: GaN-based optoelectronics integration and its key technologies

ABSTRACT: GaN quantum well diodes exhibit coexistence of luminescence detection, with an overlap region between their emission and detection spectra. GaN opto-electronic integration differs from the traditional independent design mode of discrete devices. Basically, it utilizes the multi-functional optoelectronic properties of GaN quantum well diodes to organically fuse devices for driving, optical emission, optical waveguide, modulation, optical detection and energy harvesting. It then integrates devices with different functions on the same GaN chip by adopting a compatible manufacturing process, achieving electrical isolation between devices within the chip, and realizing mutual benefits between devices, as well as allowing communication and energy transfer through visible light to obtain the fusion of logic circuits and photonic circuits. The integration of devices with different functions on the same GaN chip is then achieved by adopting a compatible manufacturing process, realizing electrical isolation between devices within the chip and allowing communication and energy transfer via visible light. It can be seen that these features can enable a combination of logic circuits and photonic loops. This report explains the physical mechanism of the luminescence detection phenomenon in quantum well diodes by integrating energy band theory and non-reversible processes, and demonstrates GaN optoelectronic integrated chips and their potential applications.

Ye Jiandong

Professor

Nanjing University

Ye Jiandong holds the full professorship at the School of Electronics Science and Engineering, Nanjing University. Currently, he focuses on the research of ultra-wide bandgap oxide semiconductor materials and devices. In 2013, he was supported by the National Excellent Youth Fund of China and Outstanding Youth Fund of Jiangsu Province. He presided over 8 projects, such as National Key R & D Projects of China, National Natural Science Foundation of China and Key R & D Projects of Jiangsu Province.

Invited Report Title: Ga₂O₃ based bipolar heterojunction power devices

ABSTRACT: In this talk, we would like to share recent progress on NiO/Ga₂O₃ p-n heterojunction based bipolar devices. The first demonstration is a Ni/Ga₂O₃ HJBS by implementing NiO as field plate and guard ring, which has the reverse breakdown voltage (BV) of 1.89 kV and a reduced turn-on voltage of 1.1 V and the shrink specific on-resistance. The second device porotype is a large sized NiO/Ga₂O₃ HJDs with a high breakdown voltage of 1.37 kV, a forward current of 13.0 A with a low on-state resistance of 0.26 Ω. In particular, a large surge current of 58 A has also been obtained in a 10-ms surge transient. By implementing beveled-mesa NiO/Ga₂O₃ p-n HJDs into a 500-W power factor correction (PFC) system circuit, high conversion efficiency of 98.5% with 100-minutes stable operating capability has been demonstrated. Rugged reliability is validated after over 1-million times dynamic breakdown with a 1.2-kV peak overvoltage. Meanwhile, superior device performance is achieved, including a static BV of 1.95 kV, a dynamic BV of 2.23 kV, a forward current of 20 A.

Wang Xuefeng

Professor

Nanjing University

Dr. Wang Xuefeng is a full-professor at Nanjing University. He obtained the funding of the National Excellent Youth and the New Century Excellent Talents in Ministry of Education, respectively. His research mainly focuses on the advanced spintronic materials and devices. He has published over 100 peer-reviewed journal papers in Nat. Nanotechnol., Adv. Mater., etc., and gained wide citation. He also serves as the editorial board member of Electronics.

Invited Report Title: Topological semimetal thin films: Large-area fabrication, properties and device applications

ABSTRACT: Recently, topological semimetals have attracted intensive attention due to their high carrier mobility and spin-momentum-locking surface states. However, it is essential to obtain large-area, high-quality thin films from the practical electronic devices viewpoint. Here, we prepared high-quality single-crystalline telluride films with low defect density and centimeter-scale size by pulsed laser deposition technique. The films exhibit intriguing quantum phenomena, such as Shubnikov-de Haas quantum oscillations, weak anti-localization, and nontrivial Berry phase at low temperatures, as revealed by magnetotransport measurements. The anisotropic spin dynamic relaxation process is revealed by the ultrafast time-resolved magneto-optic Kerr technique. Meanwhile, the anisotropic circular photogalvanic effect and terahertz emission were observed from terahertz time-domain emission spectroscopy. Our work sets up an important foundation of the topological semimetal films for the future applications in high-speed spintronic devices and terahertz devices.

Dong Shurong

Professor

Zhejiang University

Professor of Zhejiang University, director of the Institute of intelligent sensing and micro nano integration. He has presided over 25 national projects such as the key R & D projects, 863 and national fund, published more than 120 papers such as NC, and won the second prize of scientific and technological progress in Colleges and universities, the second prize of Natural Science in Colleges and universities, and the second prize of scientific and technological progress in Zhejiang Province.

Invited Report Title: ESD protection technology of FinFET process

ABSTRACT: With the progress of integrated circuit manufacturing, more and more chips adopt FinFET technology. ESD protection of FinFET process has become an urgent problem to be solved. This paper introduces the ESD protection method of FinFET process from the perspective of device level and system level, shows the test results from 16 nm FinFET to 7 nm FinFET, and focuses on the protection method of ultra-fast ESD pulse of FinFET process clock, so as to provide you with feasible circuit design technology and simulation technology.

Liu Bo

Professor

Nanjing University of Information Science and Technology

Prof. Liu was the winner of the “Cheung Kong Scholar” Young Scholar Program and was awarded the National Natural Science Foundation of China Youth Fund. He is currently focusing on optical communication, photonic coding and modulation, and optical signal processing, and has published more than 70 SCI papers in recent years.

Invited Report Title: "A Light to the end" - Fiber to Room (FTTR) all-optical access

ABSTRACT: In recent years, the rise of multiple new concept services put forward higher requirements for access bandwidth, interaction speed, network delay, device power consumption, and so on. At present, the architecture of the access network is complex, the base station equipment is huge, the power consumption is too high, and the access terminal is difficult to meet the future development requirements. As a basic technical solution for optical fiber deployment, FTTR can meet the goal of miniaturization, low power consumption, and intelligent network deployment with full coverage of high-speed and space networks. FTTR can achieve all-optical minimization, flat operation and maintenance, and a large range of arbitrary point layouts in the whole region. The information can transmit without power and continuously send without interruption in the whole scene. It can realize large bandwidth, multi-user support, and large capacity multi-access without interruption switch. FTTR technology can achieve passivity from OLT to the user side and reduce the difficulty and cost of operation and maintenance. Therefore, FTTR technology will become a common concern of broadband operators in the future.

Shahriar Mirabbasi

Professor

The University of British Columbia

Shahriar Mirabbasi has been a Professor in the Department of Electrical and Computer Engineering at UBC since 2002. He received his BSc in Electrical Engineering from Sharif University of Technology in 1990, and his MASc and PhD in Electrical and Computer Engineering from the University of Toronto in 1997 and 2002, respectively. Dr. Mirabbasi and his team’s research interests include analog, mixed-signal, and RF integrated circuit and system design for wireless and wireline data communication, data converter, sensor interface, and biomedical applications.

Invited Report Title: Trends in solid-state integrated circuit: Through the Looking Glass

ABSTRACT: Nowadays, the integrated circuit design community is evolving more than ever to support a more sustainable world. Given their widespread use in our everyday lives, without change, ICs will become the dominant energy consumer and source of carbon emissions in the (near) future. Despite phenomenal advances in solid-state circuits and systems, low-power circuit design is becoming increasingly more sophisticated in all application areas, from digital computation and machine learning to analog design. In the context of data communications, advances in wireless and wireline circuits will help optimize local and global communications energy. Various sensors can be deployed to measure environmental data and optimize energy consumption. Power management techniques continue to be an essential aspect of a majority of circuits and systems to extend their lifetime and battery longevity. Furthermore, new technologies are providing opportunities to develop innovative circuits, reduce fabrication impacts, and improve recyclability.

Lei Wen

Professor

University of Western Australia

Dr. Wen Lei’s research work mainly focuses on infrared semiconductor optoelectronic materials and devices (mainly infrared sensors), including device design and modelling, MBE/CVD epitaxial growth, device fabrication and testing, as well as system applications. He holds over 110 high profile papers in top journals like Applied Physics Reviews, PRL, AFM, Nano Letters, AOM, IEEE Transactions on VLSI Systems, and APL, etc. He is an editorial board member for four scientific journals and is/was a technical program/organizing committee member for a number of international conferences. He is/was a grant assessor for funding agencies in Australia, Singapore, Netherlands, Romania and Hongkong.

Invited Report Title: Heteroepitaxial integration of II-VI HgCdTe infrared semiconductor on III-V substrates - a solution towards next generation infrared sensing technology

ABSTRACT: The rapid development of infrared (IR) sensing applications requires next generation IR detectors and their focal plane arrays to have features of lower cost, larger array format, and higher operating temperature. However, current state-of-the-art CdZnTe-based photovoltaic HgCdTe IR detectors are seriously limited by their higher cost, smaller array format size and lower operating temperature (usually 77K) due to the limitation of CdZnTe substrates (small wafer size, high unit cost, low crystal quality, and limited commercial availability). In this work, we will report our recent progress on developing high quality, large area (Hg)CdTe semiconductors on III-V substrates (mainly GaAs and GaSb) for making next generation HgCdTe infrared detectors with features of lower cost, larger array format, and higher operating temperature. Because of the large lattice mismatch between HgCdTe and GaAs/GaSb substrates, high density of misfit dislocations (mid-10⁶ cm^-2 ~ low-10⁷ cm^-2) are typically generated in the HgCdTe epilayers, which limits the detector performance. We have developed two unique technologies (transitional buffer technology and dislocation filter technology) for suppressing the generation and filtering the propagation of misfit dislocations during the lattice mismatched heteroepitaxial growth, which can reduce the dislocation density in the (Hg)CdTe epilayers by one order of magnitude from the mid-10⁶ cm^-2 reported by current state-of-art industry manufacturers to mid-10⁵ cm^-2 or even lower. Such a low dislocation density is comparable to those grown on lattice-matched CdZnTe substrates, and meets the dislocation density requirement for making high performance infrared detectors. This represents a breakthrough in this area, and makes possible the fabrication of next generation HgCdTe infrared detectors with features of lower cost, larger array format, and higher operating temperature. More importantly, these dislocation suppression/filtering technologies can be extended to other semiconductor material systems, benefiting the development of semiconductor industry overall.

Huang Zhengfeng

Professor

Hefei University of Technology

Zhengfeng Huang, Professor, doctoral supervisor, teaching dean of National Demonstration Microelectronics College, Hefei University of Technology. His current research interests include radiation hardened by design, design for test, design for tolerance and design for reliability. He hosts three national Natural Science Foundation of China projects.

Invited Report Title: Radiation Hardened by Design of Nanoscale Integrated Circuits

ABSTRACT: With the rapid development of VLSI, high reliable and long life chip is necessary for safety critical application such as aerospace electronics, automotive electronics and medical electronics. So single event hardening cell has become research focus. This NSFC proposal describes a research plan as following. Firstly, this proposal focuses on single event double node upset filtering cell based on dual input inverter. The multiple interconnect feedback scheme can filter the double node upset entirely. The proposed cell is insensitive to high impedance. Secondly, this proposal addresses the single event double node upset blocking cell based on dual modular redundancy. It introduces two single event upset recovery cells and recovers from the wrong logic state quickly. C element at the output can block the fault propagation to the next stage. Thirdly, this proposal implements double node upset hardening cell based on heterogeneous triple modular redundancy. It can avoid common mode failure and recover from single event double node upset quickly. This research will present a solution of single event hardening cell in presence of PVTA variation with high cost performance.

Wang Cong

Professor

Harbin Institute of Technology

Wang Cong is currently working as a Professor at Harbin Institute of Technology, Harbin, China. His major interests include RFIC/MMIC design and semiconductor fabrication development such as GaAs integrated passive device (IPD), GaAs PIN diode, Schottky barrier diode, AlGaN/GaN high electron mobility transistor (HEMT), silicon-based LED module fabrication and packaging, metasurface and metamaterial, terahertz devices, microfluid-based biosensor devices, and various kinds of smart IoT sensors, and their applications which are emerging technologies of today.

Invited Report Title: TFIPD-based microwave sensors and their future perspectives

ABSTRACT: An optimized microwave sensor will be presented for the non-contact measurement of complex permittivity and material thickness. The layout of the proposed sensor comprises the parallel combination of an interdigital capacitor (IDC) loaded at the center of the symmetrical differential bridge-type inductor fabricated on an RF-35 substrate (#r = 3.5 and tand = 0.0018). The bridge-type differential inductor is introduced to obtain a maximum inductance value with high quality (Q) factor and low tunable resonant frequency. The central IDC structure is configured as a spur-line structure to create a high-intensity coupled electric field (e-field) zone, which significantly interacts with the materials under test (MUTs), resulting in an increased sensitivity. The proposed sensor prototype with optimized parameters generates a resonant frequency at 1.38 GHz for measuring the complex permittivity and material thickness.

Wang Cong

Professor

Harbin Institute of Technology

Invited Report Title: TFIPD-based microwave sensors and their future perspectives

Qiao Wen

Professor

Soochow University

Prof. Qiao has published more than 40 papers in top-ranked journals such as Advanced Materials, Light: Science & Applications and Optica, and has applied for/granted more than 100 Chinese invention patents. As the project leader, he has supervised a number of projects, including the General Program of National Natural Science Foundation of China and the "14th Five-Year Plan" of National Key R&D project.

Invited Report Title: Planar optics enabled 3D display

ABSTRACT: Augmented reality (AR) is an emerging technology that can transform our world by creating immersive experiences for users to interact with the digital world. Currently, 3D displays – one of the key AR components for visual contents – not only have bulky designs but also show limited performance due to small field of view and degraded image quality (caused by crosstalk between view angles). The fast-growing field of flat optics has attracted broad interest for AR development because of their extraordinary control over light propagation. This presentation highlights how planar optical elements ranging from diffractive gratings to metasurfaces provide game-changing solutions for glasses-free 3D display technology. We expect that our innovations in glasses-free 3D displays will turn into AR technology that reshapes our everyday life.

Bao Hualong

Professor

Soochow University

Dr. Hualong Bao is a professor at Soochow University in China. He received his PhD degree from the Department of Photonics Engineering, Technical University of Denmark in 2015. At the same year, he joined the Emergent Photonics Laboratory at the University of Sussex as a postdoctoral research fellow. In 2020, Dr. Bao Joined School of Optoelectronic Science and Engineering at Soochow University. His current research interests include the micro-resonator based frequency combs, fiber lasers, terahertz waveguides. His work has received worldwide attention and attracted more than 20 press releases. Up to now, Dr. Bao as first author has published several articles in top-tier journals, such as Nature Photonics, Physical Review Research and Photonics Research. Dr. Bao is currently holding one national scientific project of the National Natural Science Foundation of China (NSFC). Dr. Bao is the winner of Young Scientist from the 16th International Conference on Optical Communications and Networks.

Invited Report Title: Frequency comb generation in microcavity filtered fiber lasers

ABSTRACT: The generation of optical frequency combs in micro-resonators or micro-combs has developed into a hot research area in the past decade. Because of their unique characteristics, they have the potential to revolutionize many fields, spanning from metrology to high-speed optical communications. In the presentation, we will present our recent advances towards effective control of optical combs in a system comprising an optical micro-cavity nested in a fiber laser, known as the filter-driven four wave mixing laser scheme. We believe our work represents a step toward the generation of stable and controllable optical combs from integrated chip-based resonators.

Zhou Hong

Professor

Xidian University

Hong Zhou, professor in Xidian University, was selected as the national high-level overseas returnees. He has published more than 80 academic papers in IEEE EDL, IEEE TED, IEEE TIE, IEEE TPE, APL, and VLSI, DRC conferences, including 5 ESI highly-cited papers. His google academic citation is more than 2800 times.

Invited Report Title: Progress on Ga₂O₃-based power devices

ABSTRACT: Ultra-wide band-gap semiconductor gallium oxide is considered to be the most powerful competitor in the next generation of power electronic devices due to its high breakdown field, high electron mobility and low-cost large-size molten substrate. However, its p-type doping is difficult due to its ultra-wide band-gap and the natural characteristics, and its low thermal conductivity properties limit its large-scale promotion and application in power electronics. This report focuses on the exploration process of gallium oxide power devices and new structures, effective heat dissipation schemes and solutions to p-type doping problems, and gallium oxide JBS and JFET with the highest international indicators. This report can provide some new ideas for teachers and students engaged in gallium oxide research.

Zhou Hong

Professor

Xidian University

Invited Report Title: Progress on Ga₂O₃-based power devices

Xiao Shaoqing

Professor

Jiangnan University

Professor of Department of Electronic Engineering, Jiangnan University. He received his Ph.D. degree from Shanghai Jiao Tong University in 2008, and then did postdoctoral research at Nanyang Technological University in Singapore. His research interests include low-dimensional semiconductor materials and devices as well as low-temperature plasma physics and applications. In recent five years, he has published 30 SCI papers in Nature Communications, Small, Advanced Optical Materials and so on as first and/or corresponding author, which have been cited for nearly 1000 times. He won the second prize of Natural Science Award of Ministry of Education in 2021.

Invited Report Title: Growth and optoelectronic property modulation of two-dimensional materials and heterostructures

ABSTRACT: Two-dimensional (2D) atomic crystal superlattices allow the integration of highly different two-dimensional layered materials without the limitation of lattice matching, and thus have wide range of adjustable electronic properties, providing unique functions and technical applications far beyond existing materials. However, the controllable preparation of two-dimensional atomic crystal superlattices remains a challenge. We have developed a new conceptual solution based on soft oxygen plasma intercalation. We take advantage of the parallel electric field of our self-developed soft plasma to intercalate O₂⁺ ions into the interlayer of TMDs, and then produce artificial 2D atomic crystal molecular superlattices (ACMSs). The resulting interlayer gap expansion can effectively isolate TMD monolayers and impart exotic properties to homogeneous-(MoS₂[O₂]_X) and hetero-(MoS₂[O₂]_X/WS₂[O₂]X) stacked ACMSs beyond typical capacities of monolayer TMDs, such as 100 times stronger photoluminescence and 100 times higher photocurrent. In addition, we propose a 2D alloying engineering strategy to address the slow response time problem of 2D photoconductive photodetectors. MoSnS₂ and ReSSe monolayer alloys are successfully prepared by salt-assisted confined space CVD method, which greatly reduces the response time of the alloy photodetectors.

Zhang Delin

Professor

Tiangong University

Delin Zhang is a “Tiangong Jieqing” professor in the School of Electronics and Information Engineering at the Tiangong University, awarded Young Scholars of Tianjin Overseas High-level Talents Program. Delin Zhang joined the Max Planck Institute for Chemical Physics of Solids, Dresden, Germany as a postdoctoral scientist and the Department of Electrical and Computer Engineering of the University of Minnesota as a postdoctoral and researcher.

Invited Report Title: Electric-field switching of perpendicular magnetic tunnel junctions for ultralow-energy spintronic devices

ABSTRACT: Using an electric-field to control the magnetization switching has been considered as a promising method and has been intensively studied for the applications on ultralow-power memory and logic devices. In this talk, I will present our new achievements of the bipolar E-field switching of the FePd p-MTJs devices bidirectionally without the assistant of an external magnetic field and the spin-orbit toques [Co/Pd]_n p-MTJs with synthetic-antiferromagnetic free layer and a bilayered spin Hall channel. For FePd p-MTJs, the positive/negative voltage bias can lead to the high- and low-resistance states toggling back and forth in FePd p-MTJs, demonstrating bidirectional magnetization switching. A low critical current density ~1×10⁵ A/cm² is obtained, which is one order of magnitude lower than that of the best-reported STT devices. In addition, for [Co/Pd]_n p-MTJs, through an assistance of spin-orbit torque, bidirectional switching is obtained by bipolar E-field with switching current density as low as 3×10³

Wan Xi

Associate Professor

Jiangnan University

Dr. Wan's research mainly focuses on 2D materials and devices, and he has published over 30 journal papers in Advanced Materials, Advanced Functional Materials, ACS Nano, etc. He has obtained the funding of the E&I (Entrepreneurship and Innovation) Plan, and the Six talent peaks project in Jiangsu Province. He has won second prize of natural science award of the Ministry of Education.

Invited Report Title: Synthesis of 2D Materials and Their Device Applications using Inkjet Printing Technology

ABSTRACT: Chemical vapor deposition (CVD) has been widely used to synthesize 2D layered materials, such as the transition-metal dichalcogenides (TMDCs). However, during the CVD process, the in situ robust quantitative control of the precursor is still challenging. Here, by using a customized inkjet-printer, an in situ aqueous precursor with robust usage control at the picogram level is achieved, and by precisely tuning the inkjet printing parameters, followed by a rapid heating process, the patterned TMDC films in centimeter size with excellent FET performance are achieved. Based on the MoS₂ films prepared using inkjet printing, the metallic Janus MoSH Monolayer has been obtained by the H₂ plasma treatment. In addition, the flexible and broadband photodetectors are prepared by the inkjet printing of the water-based 2D crystal (including graphene and TMDCs) inks. Our work paves a new way for the preparation of 2D materials and their devices.

Kong Moufu

Associate Professor

University of Electronic Science and Technology of China

Prof. Moufu Kong’s research focuses on smart power integrated circuits, high voltage power devices and wide-bandgap semiconductor devices. He has published nearly 50 academic papers in Nat Commun, IEEE T-ED, IEEE EDL, SST, etc. and IEEE international conferences. He served as a technical program committee member for technical conferences including IEEE ICSICT, IEEE ASICON, IEEE ISNE and IEEE EDTM.

Invited Report Title: Novel Sidewall Enhanced Trench Polysilicon/SiC Heterojunction Diode with Energy Barrier Height Control technology

ABSTRACT: Silicon carbide power diodes are widely used in various power electronic systems due to their low losses. In the conventional SiC Schottky diodes, the forward voltage drops mainly depends on the work function of the anode metal material, which brings constraints to the design of SiC Schottky diodes. For the proposed Polysilicon/SiC heterojunction diode (HJD), the barrier height and forward voltage drop can be optimized by adjusting the polysilicon doping type and concentration. And the trade-off relationship between the on-state conduction loss and off-state losses (leakage current) also can be improved according different applications. In this paper, a novel sidewall enhanced trench HJD is proposed to achieve extremely low leakage current under the premise of high forward current density and low on-voltage drop, which brings a new design method for the SiC power diodes.

Du Lin

Senior Engineer

Shanghai Precision Metrology and Testing Research Institute

Dr. Lin Du is currently a Senior Engineer with Shanghai Precision Metrology and Testing Research Institute, Shanghai, China. He has authored/co-authored more than 20 articles including more than 10 peer-reviewed journals, and holds 5 Chinese patents. His current research interests include microwave active/passive circuit & reliability, and digital/analog/RF micro-system reliability.

Invited Report Title: Research on SiP Assessment Methods for High Reliability Applications.

ABSTRACT: System-in-package (SiP) is an integrated device with low profile, high integration, and diversified functions, suitable for high-reliability application scenarios such as satellites. SiP operates in Rapid high and low temperature changes, long-term high temperature environment, severe vibration and shock, harsh application environment will bring more reliability problems. Sip using a three-dimensional stack structure, which includes multiple interfaces such as silicon-silicon and silicon-ceramic. Complex interfaces mean thermal management problems; electromagnetic coupling effects occur in multilayer vertical interconnections and high-density bonding wires; fine pitch bumps and solder balls are faced with structural and interface degradation problems caused by electro-thermal coupling stress. This paper analyzes the difficulty of reliability evaluation of Sip in high reliability applications, and proposes a reliability evaluation method based on the process. Simulation and structure analysis are carried out to investigate reliability evaluation technology.

Zhang Junzhi

Senior Engineer

Nanjing Electrionic Device Institute

Dr. Junzhi Zhang, senior engineer, the third level talent of Jiangsu "333" plan. He has written/CO authored more than 10 articles and holds 5 patents. He has undertaken 10 scientific research projects. His current research direction is the application of Microsystem Technology in the integration of TR modules and frequency conversion modules.

Invited Report Title: Research Progress and Prospect of Silicon-based RF Microsystems

ABSTRACT: RF microsystems based on silicon have great application potential in RF/microwave communications, radar and other scenarios, which benefits from silicon-based three-dimensional stacking technology and software reconfigurable technology. Silicon process can provide good batch manufacturing capacity, and devices fabricated with 3D integration technology have the advantages of low profile, strong thermal conductivity and high integration. In addition, devices based on software-defined reconfigurable technology are very suitable for miniaturized radio frequency microsystems for communications. In this paper, the progress of RF microsystems based on silicon is reviewed, and the key technologies of RF microsystem integration are combed. To the best knowledge of the author, problems existing in design and integration are summarized, and corresponding solutions are given. Finally, development trend of the application of this kind of device are prospected.

Guo Lei

Associate Professor

Dalian University of Technology

Dr. Lei Guo has authored/ co-authored more than 30 articles including more than 20 peer-reviewed journals, and holds 8 patents including 5 US patents and 3 Chinese patents. She received the Student Best Paper Award in iWEM-2015. She served as the organizing committee member of 2018 IEEE MTT-S WPTC, 2022 ICMMT, 2022 IoTCIT, and etc. Dr. Guo is now serving as the Associate Editor of IEEE Open Journal of Antennas and Propagation (OJAP). Her current research interests include wireless energy harvesting techniques, dielectric resonator antennas, and wireless sensing technologies.

Invited Report Title: Analytical modelling and designing RF power harvesters for wirelessly charging IoT sensor nodes

ABSTRACT: Wireless power harvesting technologies provide a new charging solution to remotely powering WSNs. In this talk, analytical methods for evaluating and designing RF power harvesters will be discussed by considering the wide adaptability to frequencies, input power and load conditions. Based on the analysis, wide-power-range RF power harvester systems will also be discussed and its feasibility of integration with a low-power wireless sensor platform will be demonstrated. The proposed wireless power harvesting techniques have potentials to be implemented in IoT applications where powering issues are critical.

Cai Mengye

Associate Professor

Jiangnan University

Doctor of Entrepreneurship and Innovation in Jiangsu Province. His main research interests include analog, RF and mixed-signal integrated circuit design, implantable biomedical chip systems, wireless energy transmission and energy management design. In the past five years, he published more than ten papers in IEEE JSSC, MTT, TCAS, TIE and other journals as the first author or corresponding author.

Invited Report Title: Trend in next generation CMOS based RF integrated circuits for Internet of Things applications

ABSTRACT: The aggressive scaling of the CMOS technologies has made it possible to implement denser, cheaper, higher performance and lower power integrated circuits (ICs) for a widespread of applications. Among these applications in various Internet of Things (IoT) wireless communication are key functions. The ongoing trend towards miniaturized IC systems calls for alternative implementations with higher levels of integration to avoid external components and minimize the size, and reduce the calibration overhead to minimize the power consumption, without sacrificing the overall performance.

In this abstract, several design techniques are investigated, and various system- and circuit-level approaches are proposed to meet the stringent size and power requirements. Several design prototypes are presented that have improved sensitivity and lower hardware cost as compared to those of the state-of-the-art while consuming a low power, and having a small form factor and improved performance. The proposed solutions also have a great potential for other low-power applications.

Chen Chaoping

Associate research fellow

Shanghai Jiao Tong University

Dr. Chen is the head of the Intelligent Display Laboratory at Shanghai Jiao Tong University. He has published more than 40 SCI papers with over 500 citations (Google Scholar) and an H-index of 13. He was awarded the Morning Star Youth Award Program of Shanghai Jiaotong University, The 3rd Shanghai Vacuum Youth Innovation Award and the First Prize of TRIZ Invention Patent Competition of Jiangsu (Longteng) Institute of Flat Panel Display Technology.

Invited Report Title: Near-Eye Displays with Triple-Channel Waveguide for Augmented/Virtual Reality

ABSTRACT: Lately, a buzzword called “metaverse” has been going viral across the globe. Despite being overhyped, metaverse is still in its infancy, lacking of mature technologies and products to deliver. For starters, one of the most crucial building blocks of metaverse is arguably the near-eye displays (NEDs), e.g. augmented/virtual reality (AR/VR) eyewear. The mainstream NEDs often come in three types of architectures, i.e. combiners, magnifiers, and waveguides. Which type of architecture is ideal for NEDs? In the short run, combiners and magnifiers are prevailing in the sectors of AR and VR, respectively. However, in the long run, waveguides are tipped to overtake the former two for both AR and VR. This prediction is not groundless for several reasons. Number one, waveguides could support big field of views (FOVs). Number two, waveguides are compatible with minimal designs, more resembling normal eyeglasses. Number three, waveguides, by leveraging the total internal reflection, lend themselves to the exit pupil or eyebox expansion. Yet, waveguides have many issues too. One major concern, among others, is about the poor uniformity across the eyebox region. This is because that different fields propagate at different angles within the waveguide. And it will only get worse as the FOV becomes bigger. To address this issue, we hereby present a triple-channel-waveguide-based NED, which aims to achieve a balance between the FOV and uniformity. In this talk, we will be discussing on how to design this type of architecture and exploring both its merits and limits.

Eun-Seong Kim

Research Professor

Kwangwoon University

Eun-Seong Kim was born in Seoul, South Korea, in 1994. He received the M.S and Ph.D. degree in electronic engineering from Kwangwoon University, Seoul, South Korea, in 2019. Also, he received M.S for Biomedical MBA on 2021 in Kwangwoon University. He is currently working in Wavepia Co., Ltd. as senior research in Load-pull operator and Kwangwoon University RFIC laboratory. He has published 46 papers and 18 patents. His current research interests include the fabrication of integrated passive devices, light efficient LED packaging, passive electronic chips for biosensing applications, humidity sensors, and flexible printing methods for sensor and RF cancer treatment applications.

Invited Report Title: High sensitive and reusable microwave glucose biosensor based on microwave technique

ABSTRACT: Diabetic mellitus is one of the major threats to human health. The prevalence of diabetes mellitus is proliferating worldwide, therefore timely monitoring of glucose levels is vitally important. Radio frequency (RF) biosensing, based on perturbation theory and the related effect of dielectric constant on microwave transmission, has successfully realized blood glucose detection. It has the characteristics of label-free, passive and reusability, but also has the disadvantages of large volume and not be easily integrated. Herein, we proposed an integrated passive RF biosensor fabricated by micro-nano processing technology, consisting of three electroplated layers of Cu/Au (4.5/0.5um) metal, with an overall size of less than 1 mm* 1 mm* 1 mm. Also, it's combined with microfluidics technology to control the sample under test volume at 70 uL. It can realize the quantitative detection of 100-500 mg/dL glucose aqueous solution and provide multi-parameter analysis including S11_minimum, S11_average, S21_maximum, S21_average with corresponding sensitivity of 4.50E-4,1.46E-3,3.823E-4,4.21E-4 dB per mg/dL, with extremely high linearity. Our biosensor is promising as a glucose biosensor, further integrated with other devices.